UML12N transistors 1/4 general purpose transistor (isolated transistor and diode) UML12N 2sc4617and rb521s-30 are housed independently in a umt5 package. z applications dc / dc converter motor driver z features 1) tr : low v ce(sat) di : low v f 2) small package z structure silicon epitaxial planar transistor schottky barrier diode z equivalent circuit tr2 di1 (1) (2) (3) (4) (5) z packaging specifications type UML12N umt5 l12 tr 3000 package marking code basic ordering unit (pieces) z external dimensions (units : mm) rohm : umt5 eiaj : sc-88a 0.9 0.15 0~0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) (5) 0.2 1.25 ( 2 ) 0.65 ( 3 ) abbreviated symbol : l12 each lead has same dimensions
UML12N transistors 2/4 z absolute maximum ratings (ta=25 c) di1 parameter symbol i o i fsm v r tj tstg limits 200 1 30 125 ? 55~ + 125 unit ma a v c c average revtified forward current forward current surge peak (60hz, 1 ) reverse voltage (dc) junction temperature range of storage temperature tr2 parameter symbol limits unit v cbo 60 v 50 v v v ceo v ebo 7 i c ma 150 tj 150 ?c tstg ? 55 + 125 ?c p d 120 mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? each terminal mount on a recommended. z electrical characteristics (ta=25 c) di1 parameter symbol min. typ. max. unit conditions v r ? 0.40 0.50 v i f = 200ma forward voltage reverse current i r ? 4.0 30 av r = 10v tr2 parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. 60 50 7 ? ? 180 ? ? ? ? ? ? ? ? ? 2 ? ? ? 0.1 0.1 390 0.4 3.5 vi c = 50 a i c = 1ma i e = 50 a v cb = 60v v eb =7 v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v v a a ? v pf typ. max. unit conditions f t ? 180 ? v ce = 12v, i e = ? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance
UML12N transistors 3/4 z electrical characteristic curves di1 1 10 100 1m 10m 100m 1 forward current : i f (a) forward voltage : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 c 5 2 1 = a t c 5 7 c 5 2 c 5 2 ? fig.1 forward characteristics 10n 100n 1 10 100 1m 10m reverse current : i r (a) reverse voltage : v r (v) 0102030 ta = 125 c 75 c 25 c ? 25 c fig.2 reverse characteristics tr2 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 v ce = 6v collector current : i c ( ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 25?c ? 55?c ta=100?c 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25?c i b =0a 0.40ma 0.50ma 0.45ma fig.2 grounded emitter output characteristics ( i ) 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25?c collector current : i c (ma) collector to emitter voltage : v ce (v) 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a fig.3 grounded emitter output characteristics ( ii ) 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25?c dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( i ) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25?c ? 55?c ta=100?c v ce = 5v dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ii ) 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.02 0.05 0.1 0.2 0.5 i c /i b =50 20 10 ta=25?c collector saturation voltage : v ce (sat) ( v) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current
UML12N transistors 4/4 0.2 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 ?c fig.7 collector-emitter saturation voltage vs. collector current ( i ) 0.2 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100?c 25?c ? 55?c fig.8 collector-emitter saturation voltage vs. collector current ( ii ) collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100?c 25?c ? 55?c fig.9 collector-emitter saturation voltage vs. collector current ( iii ) 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25?c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.11 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25?c f = 1mhz i e =0a i c =0a ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 10 20 50 100 200 emitter current : i e (ma) fig.12 base-collector time constant vs. emitter current base collector time constant : cc r bb' (ps) ta=25 ?c f=32mh z v cb =6v
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